Conditioning circuits for nanoscale perpendicular spin transfer torque magnetic tunnel junctions as magnetic sensors
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Autor:innen
Sousa, Ricardo C.
Mora-Hernández, Ariam
Prejbeanu, Ioan-Lucian
Hebrard, Luc
Kammerer, Jean-Baptiste
Autor:in (Körperschaft)
Publikationsdatum
2023
Typ der Arbeit
Studiengang
Typ
01A - Beitrag in wissenschaftlicher Zeitschrift
Herausgeber:innen
Herausgeber:in (Körperschaft)
Betreuer:in
Übergeordnetes Werk
IEEE Sensors Journal
Themenheft
DOI der Originalpublikation
Link
Reihe / Serie
Reihennummer
Jahrgang / Band
23
Ausgabe / Nummer
6
Seiten / Dauer
Patentnummer
Verlag / Herausgebende Institution
IEEE
Verlagsort / Veranstaltungsort
Auflage
Version
Programmiersprache
Abtretungsempfänger:in
Praxispartner:in/Auftraggeber:in
Zusammenfassung
This article demonstrates a new type of magnetic sensor using a perpendicular spin transfer torque magnetic tunnel junction (MTJ). The sensing element has a cylindrical shape of 50 nm in diameter and is to our knowledge among the smallest magnetic sensor ever reported. This article describes the principle of operation of the sensing element and the associated signal processing electronics, which delivers a signal proportional to the external magnetic field. Experimental results are detailed and compared to the state-of-the-art commercially available integrated magnetic sensors as well as published magnetoresistive sensors based on MTJs with comparable size. The measured sensitivity of the developed sensor is 1.28 V/T, and its dynamic range reaches 80 mT. The measured noise level is 21.8μT/√ Hz. Two different operating principles of the proposed sensor are described and compared, one based on a time-to-digital converter and one based on a pulsewidth-modulated (PWM) signal. Both methods require only standard microelectronics components, which are suitable for monolithic integration of the sensing element with its conditioning electronics. Subsequent improvements of the sensing element as well as conditioning electronics are required to further lower the noise level. The sensing element and its conditioning electronics are compatible with fabrication processes already used in magnetic random access memory fabrication. This opens the way to mass production and addresses various markets, such as consumer electronics, automotive, industrial sensing, physics experiments, or medical devices.
Schlagwörter
Sensors, Magnetic tunneling, Magnetic sensors, Junctions, Switches, Magnetic fields, Magnetic hysteresis
Fachgebiet (DDC)
600 - Technik, Medizin, angewandte Wissenschaften
Veranstaltung
Startdatum der Ausstellung
Enddatum der Ausstellung
Startdatum der Konferenz
Enddatum der Konferenz
Datum der letzten Prüfung
ISBN
ISSN
1530-437X
1558-1748
1558-1748
Sprache
Englisch
Während FHNW Zugehörigkeit erstellt
Ja
Publikationsstatus
Veröffentlicht
Begutachtung
Peer-Review der ganzen Publikation
Open Access-Status
Closed
Lizenz
Zitation
NICOLAS, Hugo, Ricardo C. SOUSA, Ariam MORA-HERNÁNDEZ, Ioan-Lucian PREJBEANU, Luc HEBRARD, Jean-Baptiste KAMMERER und Joris PASCAL, 2023. Conditioning circuits for nanoscale perpendicular spin transfer torque magnetic tunnel junctions as magnetic sensors. IEEE Sensors Journal. 2023. Bd. 23, Nr. 6. DOI 10.1109/JSEN.2023.3241967. Verfügbar unter: https://irf.fhnw.ch/handle/11654/45330