2023-09, Nicolas, Hugo, Sousa, Ricardo C., Mora-Hernández, Ariam, Prejbeanu, Ioan-Lucian, Hebrard, Luc, Kammerer, Jean-Baptiste, Pascal, Joris

This paper presents the use of the spin transfer torque effect in perpendicular magnetic tunnel junctions to operate the devices as magnetic sensors. The junctions, specifically designed for sensing applications exhibit close to low-coercivity, allowing the sensitivity to be as high as 25 mV/mT for a large dynamic range of 20 mT. In addition, the junctions have diameters ranging from 20 to 100 nanometers, making them among the smallest magnetic sensing elements ever reported to our knowledge. A single operational amplifier operates the junction and outputs a voltage proportional to the external magnetic field. This paper opens the way to a monolithic integration of both the conditioning electronics and the perpendicular magnetic tunnel junction.