Modeling the Effect of Strong Magnetic Field on N-Type MOSFET in Strong Inversion
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12/2018
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06 - Presentation
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Bordeaux
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25th IEEE International Conference on Electronics Circuits and Systems
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English
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Unpublished
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PASCAL, Joris, 2018. Modeling the Effect of Strong Magnetic Field on N-Type MOSFET in Strong Inversion. 25th IEEE International Conference on Electronics Circuits and Systems. Bordeaux. Dezember 2018. Verfügbar unter: http://hdl.handle.net/11654/27335