Effects of Bi and Sb ion incorporation on the optoelectronic properties of mixed lead–tin perovskites

Typ
01A - Beitrag in wissenschaftlicher Zeitschrift
Herausgeber:innen
Herausgeber:in (Körperschaft)
Betreuer:in
Übergeordnetes Werk
Journal of Materials Chemistry C
Themenheft
DOI der Originalpublikation
Link
Reihe / Serie
Reihennummer
Jahrgang / Band
13
Ausgabe / Nummer
10
Seiten / Dauer
5161-5171
Patentnummer
Verlag / Herausgebende Institution
Royal Society of Chemistry
Verlagsort / Veranstaltungsort
Auflage
Version
Programmiersprache
Abtretungsempfänger:in
Praxispartner:in/Auftraggeber:in
Zusammenfassung
Doping with small densities of foreign ions is an essential strategy for tuning the optoelectronic properties of semiconductors, but the effects of doping are not well-understood in halide perovskites. We investigate the effect of Bi3+ and Sb3+ doping in lead–tin perovskites. Films doped with small amounts of BiI3 and SbI3 show greatly increased non-radiative recombination at precursor doping concentrations as low as 1 ppm for Bi3+ and 1000 ppm for Sb3+. We rationalize such behaviour by density functional theory (DFT) simulations, showing that these metal ions can be incorporated in the perovskite crystal by introducing deep trap levels in the band gap. Having found that very small amounts of Bi3+ greatly reduce the optoelectronic quality of lead–tin perovskite films, we investigate the presence of Bi impurities in perovskite precursor chemicals and find quantities approaching 1 ppm in some. In response, we introduce a facile method for removing Bi3+ impurities and demonstrate removal of 100 ppm Bi from a perovskite ink. This work demonstrates how the incorporation of small concentrations of foreign metal ions can severely affect film quality, raising the importance of precursor chemical purity.
Schlagwörter
Bromine compounds, Carrier concentration, Crystal impurities, Germanium compounds, Metal halides, Photoionization, Semiconducting antimony compounds, Semiconducting bismuth compounds, Semiconductor doping, Tin compounds
Projekt
Veranstaltung
Startdatum der Ausstellung
Enddatum der Ausstellung
Startdatum der Konferenz
Enddatum der Konferenz
Datum der letzten Prüfung
ISBN
ISSN
2050-7526
2050-7534
Sprache
Englisch
Während FHNW Zugehörigkeit erstellt
Ja
Zukunftsfelder FHNW
Zero Emission
Publikationsstatus
Veröffentlicht
Begutachtung
Peer-Review der ganzen Publikation
Open Access-Status
Hybrid
Lizenz
'https://creativecommons.org/licenses/by/4.0/'
Zitation
Rombach, F. M., Gregori, L., Sidler, A., Whitworth, J., Zeiske, S., Jin, H., Hung, E. Y.-H., Motti, S., Caprioglio, P., Armin, A., Lenz, M., Meggiolaro, D., De Angelis, F., & Snaith, H. J. (2025). Effects of Bi and Sb ion incorporation on the optoelectronic properties of mixed lead–tin perovskites. Journal of Materials Chemistry C, 13(10), 5161–5171. https://doi.org/10.1039/d4tc02162b