A 2.3-GHz fully integrated dc-dc converter based on electromagnetically coupled class-D LC oscillators achieving 78.1% efficiency in 22-nm FDSOI CMOS
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Author (Corporation)
Publication date
2021
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01A - Journal article
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IEEE Solid-State Circuits Letters
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4
Issue / Number
Pages / Duration
218-221
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IEEE
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Abstract
This letter introduces a fully integrated dc–dc converter based on electromagnetically coupled class-D LC oscillators featuring on-chip stacked 8-shaped transformers in a 22-nm FDSOI CMOS process. The GHz-range resonant frequency of the proposed converter enables high integration of the passive components, achieving up to 3.2-W/mm2 power density. The on-chip 8-shaped stacked transformers reach 16.9 quality factor and 0.91 coupling coefficient, demonstrating 78.1% converter efficiency. Furthermore, the twisted nature of the 8-shaped transformers introduces a magnetic field cancellation mechanism that minimizes the parasitic coupling between the transformers, saving 25% area in one single converter unit and 47% in the converter array, with respect to a spiral transformer implementation. In addition, the field intensity is reduced by 27 dB outside of the transformer borders compared with a spiral implementation, which helps to mitigate issues, such as parasitic magnetic coupling with neighboring circuits and electromagnetic interference.
Keywords
Transformers, Density measurement, Power system measurements, Couplings, System-on-chip, Spirals, Magnetic shielding, 8-shaped, crosstalk, DC–DC converters, electromagnetic interference (EMI), fully integrated voltage regulator (FIVR), on-chip transformer, power management, resonant converters, switched capacitor
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ISBN
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2573-9603
Language
English
Created during FHNW affiliation
No
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Zero Emission
Publication status
Published
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peer-reviewed
Open access category
Closed
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Citation
Novello, A., Atzeni, G., Cristiano, G., Coustans, M., & Jang, T. (2021). A 2.3-GHz fully integrated dc-dc converter based on electromagnetically coupled class-D LC oscillators achieving 78.1% efficiency in 22-nm FDSOI CMOS. IEEE Solid-State Circuits Letters, 4, 218–221. https://doi.org/10.1109/LSSC.2021.3126736