Modeling the Effect of Strong Magnetic Field on N-Type MOSFET in Strong Inversion
| dc.contributor.author | Pascal, Joris | |
| dc.date.accessioned | 2019-01-25T08:28:37Z | |
| dc.date.available | 2019-01-25T08:28:37Z | |
| dc.date.issued | 2018-12 | |
| dc.identifier.uri | http://hdl.handle.net/11654/27335 | |
| dc.description.uri | https://www.ieee-icecs2018.org/uploads/1/7/9/2/17927367/booklet_icecs2018_final.pdf | |
| dc.language.iso | en | |
| dc.accessRights | Anonymous | |
| dc.title | Modeling the Effect of Strong Magnetic Field on N-Type MOSFET in Strong Inversion | |
| dc.type | 06 - Präsentation | |
| dc.spatial | Bordeaux | |
| dc.event | 25th IEEE International Conference on Electronics Circuits and Systems | |
| dc.audience | Science | |
| fhnw.publicationState | Unpublished | |
| fhnw.ReviewType | No peer review | |
| fhnw.InventedHere | Yes | |
| fhnw.PublishedSwitzerland | No | |
| fhnw.IsStudentsWork | no |
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