The Influence of the Emitter Orientation on the Noise Characteristics of InP/InGaAs(P) DHBTs

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dc.contributor.authorHuber, Alexander
dc.contributor.authorSchnyder, Iwan
dc.contributor.authorJäckel, Heinz
dc.contributor.authorBergamaschi, Crispino
dc.contributor.authorSchenk, Karl
dc.date.accessioned2016-04-06T14:25:41Z
dc.date.available2016-04-06T14:25:41Z
dc.date.issued2000
dc.event24th Workshop on Compound Semiconductor Devices and Circuits
dc.identifier.urihttp://hdl.handle.net/11654/17756
dc.relation.ispartofProc. 24th Workshop on Compound Semiconductor Devices and Circuits
dc.titleThe Influence of the Emitter Orientation on the Noise Characteristics of InP/InGaAs(P) DHBTs
dc.type04B - Beitrag Konferenzschrift
dspace.entity.typePublication
fhnw.InventedHereJa
fhnw.affiliation.hochschuleHochschule für Technikde_CH
fhnw.affiliation.institutlnstitut für Sensorik und Elektronikde_CH
fhnw.paginationVII-7-8
relation.isAuthorOfPublication911e2394-19ba-4b7d-b8bc-84e2a01e8e53
relation.isAuthorOfPublication16461cd1-27eb-4d69-9bae-e1c754fb9865
relation.isAuthorOfPublication7482baa9-635d-4dfa-8d82-91c6f79768bb
relation.isAuthorOfPublication.latestForDiscovery911e2394-19ba-4b7d-b8bc-84e2a01e8e53
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