GaAs nanowires on Si nanopillars. towards large scale, phase-engineered arrays

Type
01A - Journal article
Editors
Editor (Corporation)
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Parent work
Nanoscale Horizons
Special issue
DOI of the original publication
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Series number
Volume
7
Issue / Number
2
Pages / Duration
211-219
Patent number
Publisher / Publishing institution
Royal Society of Chemistry
Place of publication / Event location
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Abstract
Understanding key parameters for III–V nanowire growth on SiO 2/Si nanopillars, and using them to grow large-scale arrays by phase-shift lithography and/or deep ultraviolet (DUV) stepper lithography.
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ISBN
ISSN
2055-6756
2055-6764
Language
English
Created during FHNW affiliation
Yes
Strategic action fields FHNW
Publication status
Published
Review
peer-reviewed
Open access category
Hybrid
License
'https://creativecommons.org/licenses/by-nc/4.0/'
Citation
Minamisawa, R., Minamisawa, R., Güniat, L., Ghisalberti, L., Wang, L., Dais, C., Morgan, N., Dede, D., Kim, W., Balgarkashi, A., Leran, J.-B., Minamisawa, R., Solak, H., Carter, C., & Fontcuberta i Morral, A. (2022). GaAs nanowires on Si nanopillars. towards large scale, phase-engineered arrays. Nanoscale Horizons, 7(2), 211–219. https://doi.org/10.1039/d1nh00553g