Variability of Low Frequency Noise and mismatch in CORNER DOPED and standard CMOS technology

Variability of Low Frequency Noise (LFN) and Random Telegraph Noise (RTN) is a main concern in analog CMOS integrated circuits. For instance circuits such as current reference, SRAM, ring oscillators are ultimately limited by noise level and mismatch. In this work, CORNER DOPED devices have been fabricated, measured, and finally compared with standard CMOS technology with particular emphasis on weak inversion region. The proposed device shows improved gate voltage mismatch in weak inversion with respect to standard CMOS for a given geometry. Relying on the carrier number fluctuation theory, the Low Frequency Noise and its variability have been represented by a compact model.

Keywords

Standards, Logic gates, Low-frequency noise, Voltage measurement, Current measurement, MOSFET, low-power device, low voltage device, matching, noise

Subject (DDC)

620 - Ingenieurwissenschaften und Maschinenbau

Project

Event

International Conference on Noise and Fluctuations (ICNF)

Exhibition start date

Exhibition end date

Conference start date

20.06.2017

Conference end date

23.06.2017

Date of the last check

ISBN

978-1-5090-2760-6

ISSN

Language

English

Created during FHNW affiliation

No

Strategic action fields FHNW

Publication status

Published

Review

Peer review of the complete publication

Open access category

Closed

License

Citation

Coustans, M., Jazaeri, F., Enz, C., Krummenacher, F., Kayal, M., Meyer, R., Acovic, A., Habaš, P., Lolivier, J., & Bucher, M. (2017). Variability of Low Frequency Noise and mismatch in CORNER DOPED and standard CMOS technology. 2017 International Conference on Noise and Fluctuations (ICNF), 1–4. https://doi.org/10.1109/ICNF.2017.7985953

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