Variability of Low Frequency Noise and mismatch in CORNER DOPED and standard CMOS technology

Variability of Low Frequency Noise (LFN) and Random Telegraph Noise (RTN) is a main concern in analog CMOS integrated circuits. For instance circuits such as current reference, SRAM, ring oscillators are ultimately limited by noise level and mismatch. In this work, CORNER DOPED devices have been fabricated, measured, and finally compared with standard CMOS technology with particular emphasis on weak inversion region. The proposed device shows improved gate voltage mismatch in weak inversion with respect to standard CMOS for a given geometry. Relying on the carrier number fluctuation theory, the Low Frequency Noise and its variability have been represented by a compact model.

Schlagwörter

Standards, Logic gates, Low-frequency noise, Voltage measurement, Current measurement, MOSFET, low-power device, low voltage device, matching, noise

Fachgebiet (DDC)

620 - Ingenieurwissenschaften und Maschinenbau

Projekt

Veranstaltung

International Conference on Noise and Fluctuations (ICNF)

Startdatum der Ausstellung

Enddatum der Ausstellung

Startdatum der Konferenz

20.06.2017

Enddatum der Konferenz

23.06.2017

Datum der letzten Prüfung

ISBN

978-1-5090-2760-6

ISSN

Sprache

Englisch

Während FHNW Zugehörigkeit erstellt

Nein

Zukunftsfelder FHNW

Publikationsstatus

Veröffentlicht

Begutachtung

Peer-Review der ganzen Publikation

Open Access-Status

Closed

Lizenz

Zitation

Coustans, M., Jazaeri, F., Enz, C., Krummenacher, F., Kayal, M., Meyer, R., Acovic, A., Habaš, P., Lolivier, J., & Bucher, M. (2017). Variability of Low Frequency Noise and mismatch in CORNER DOPED and standard CMOS technology. 2017 International Conference on Noise and Fluctuations (ICNF), 1–4. https://doi.org/10.1109/ICNF.2017.7985953

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