A short note on frequency-domain damage calculation for power semiconductors reliability control design

dc.contributor.authorRezaeizadeh, Amin
dc.contributor.authorMastellone, Silvia
dc.date.accessioned2025-02-11T06:29:35Z
dc.date.issued2025-02-10
dc.description.abstractIn this short note, we give a simple derivation of the damage calculation for power semiconductors based on the frequency-domain approximation of damage. This analysis can be further used to design linear control systems aimed at reducing the damage to the semiconductor switches in power converters.
dc.identifier.urihttps://irf.fhnw.ch/handle/11654/50126
dc.identifier.urihttps://doi.org/10.26041/fhnw-11938
dc.language.isoen
dc.publisherFachhochschule Nordwestschweiz FHNW
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.spatialWindisch
dc.subjectsemiconductors lifetime
dc.subjectfrequency-domain fatigue analysis
dc.subjectreliability
dc.subject.ddc620 - Ingenieurwissenschaften und Maschinenbau
dc.titleA short note on frequency-domain damage calculation for power semiconductors reliability control design
dc.type05 - Forschungs- oder Arbeitsbericht
dspace.entity.typePublication
fhnw.InventedHereYes
fhnw.ReviewTypeNo peer review
fhnw.affiliation.hochschuleHochschule für Technik und Umwelt FHNWde_CH
fhnw.affiliation.institutInstitut für Elektrische Energietechnikde_CH
fhnw.publicationStateUnpublished
fhnw.strategicActionFieldZero Emission
relation.isAuthorOfPublication660ce7b1-27cc-47c2-8d39-1f34f2ca168a
relation.isAuthorOfPublicationdfa00cae-b3d6-4d4a-8926-d15d6a761bf9
relation.isAuthorOfPublication.latestForDiscovery660ce7b1-27cc-47c2-8d39-1f34f2ca168a
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