Passivation strategies for minimizing inversion leakage in SiC MOS capacitors
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2026
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01A - Journal article
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Journal of Integrated Circuits and Systems
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21
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1
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Sociedade Brasileira de Computacao
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Abstract
In this work, MOS capacitors were developed to study the effect of thin SiO₂ films at the TiO₂/SiC interface. This thin layer aims to reduce the leakage current observed in capacitors with TiO₂ and potentially serves as a passivation layer for the SiC substrate, thereby decreasing the charge density at the interface. SiO₂ films of thicknesses of 2 nm and 10 nm and a 50 nm-thick TiO₂ film were used. Structural characterization revealed that the SiO₂ films are silicon-rich, while the TiO₂ film is titanium-rich. Raman and FTIR analyses of the TiO₂ film deposited on SiC showed that the film exhibits an anatase crystalline structure. Electrical characterization confirmed that the 2 nm-thick SiO₂ film reduced the device leakage current by two orders of magnitude, although it was ineffective in passivating the SiC surface. On the other hand, passivation with N2+O2 plasma yielded a superior-quality interface, as evidenced by an almost null C-V hysteresis, indicating a significant reduction of trapped charges at the interface.
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1807-1953
1872-0234
1872-0234
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English
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Yes
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Published
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peer-reviewed
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Diamond
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César, R. R., Vidal, M. M., Cioldin, F. H., Maiolini, G., Minamisawa, R., Santos, M. V. P. d., & Diniz, J. A. (2026). Passivation strategies for minimizing inversion leakage in SiC MOS capacitors. Journal of Integrated Circuits and Systems, 21(1). https://doi.org/10.29292/jics.v21i1.1140