Influence of post-metallization annealing time on the electrical response of AINx-based MOS capacitor on 4H-SiC substrate
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Author (Corporation)
Publication date
2026
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04B - Conference paper
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2026 40th Symposium on Microelectronics Technology and Devices (SBMicro)
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Pages / Duration
1-4
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Publisher / Publishing institution
IEEE
Place of publication / Event location
Sao Paulo
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Abstract
This work investigates the structural and electrical properties of an AI/AINx /passivation layer/4H-SiC/AI MOS capacitor subjected to forming gas annealing. The dielectric stack was characterized using ellipsometry, AFM, Raman spectroscopy, and FTIR, revealing a non-stoichiometric AINx film with predominantly amorphous structure and evidence of AI-rich composition. Electrical characterization was performed through high-frequency (100 kHz) C–V measurements in both forward and reverse sweeps. The as-deposited device exhibited a pronounced hysteresis (ΔVFB=1.40 V) and a wide voltage window, indicating a high density of trapped charges and interface states. After cumulative annealing at 450 °C, the voltage window was significantly reduced and the hysteresis decreased to a minimum of 0.16 V after 20 minutes, indicating improved interface quality. The interface state density (Dit ) was estimated using a simplified Terman-based approach, showing a reduction from ∼1013cm−2eV−1 to ∼1012cm−2eV−1 after annealing. These results demonstrate that the combination of an AINx dielectric layer and optimized annealing effectively improves the electrical performance of SiC MOS structures.
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Subject (DDC)
Event
2026 40th Symposium on Microelectronics Technology and Devices (SBMicro)
Exhibition start date
Exhibition end date
Conference start date
24.08.2026
Conference end date
28.08.2026
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ISBN
979-8-3195-0519-4
979-8-3195-0520-0
979-8-3195-0520-0
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Language
English
Created during FHNW affiliation
Yes
Strategic action fields FHNW
Publication status
Published
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peer-reviewed
Open access category
Closed
Citation
Mederos, M., César, R., Couto, O. D. D., Puydinger Dos Santos, M. V., Minamisawa, R., & Diniz, J. A. (2026). Influence of post-metallization annealing time on the electrical response of AINx-based MOS capacitor on 4H-SiC substrate. 2026 40th Symposium on Microelectronics Technology and Devices (SBMicro), 1–4. https://doi.org/10.1109/sbmicro70495.2026.11684408