Influence of post-metallization annealing time on the electrical response of AINx-based MOS capacitor on 4H-SiC substrate
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Autor:in (Körperschaft)
Publikationsdatum
2026
Typ der Arbeit
Studiengang
Typ
04B - Beitrag Konferenzschrift
Herausgeber:innen
Herausgeber:in (Körperschaft)
Betreuer:in
Übergeordnetes Werk
2026 40th Symposium on Microelectronics Technology and Devices (SBMicro)
Themenheft
DOI der Originalpublikation
Link
Zugehörige Forschungsdaten
Reihe / Serie
Reihennummer
Jahrgang / Band
Ausgabe / Nummer
Seiten / Dauer
1-4
Patentnummer
Verlag / Herausgebende Institution
IEEE
Verlagsort / Veranstaltungsort
Sao Paulo
Auflage
Version
Programmiersprache
Abtretungsempfänger:in
Praxispartner:in/Auftraggeber:in
Zusammenfassung
This work investigates the structural and electrical properties of an AI/AINx /passivation layer/4H-SiC/AI MOS capacitor subjected to forming gas annealing. The dielectric stack was characterized using ellipsometry, AFM, Raman spectroscopy, and FTIR, revealing a non-stoichiometric AINx film with predominantly amorphous structure and evidence of AI-rich composition. Electrical characterization was performed through high-frequency (100 kHz) C–V measurements in both forward and reverse sweeps. The as-deposited device exhibited a pronounced hysteresis (ΔVFB=1.40 V) and a wide voltage window, indicating a high density of trapped charges and interface states. After cumulative annealing at 450 °C, the voltage window was significantly reduced and the hysteresis decreased to a minimum of 0.16 V after 20 minutes, indicating improved interface quality. The interface state density (Dit ) was estimated using a simplified Terman-based approach, showing a reduction from ∼1013cm−2eV−1 to ∼1012cm−2eV−1 after annealing. These results demonstrate that the combination of an AINx dielectric layer and optimized annealing effectively improves the electrical performance of SiC MOS structures.
Schlagwörter
Fachgebiet (DDC)
Veranstaltung
2026 40th Symposium on Microelectronics Technology and Devices (SBMicro)
Startdatum der Ausstellung
Enddatum der Ausstellung
Startdatum der Konferenz
24.08.2026
Enddatum der Konferenz
28.08.2026
Datum der letzten Prüfung
ISBN
979-8-3195-0519-4
979-8-3195-0520-0
979-8-3195-0520-0
ISSN
Sprache
Englisch
Während FHNW Zugehörigkeit erstellt
Ja
Zukunftsfelder FHNW
Publikationsstatus
Veröffentlicht
Begutachtung
peer-reviewed
Open Access-Status
Closed
Zitation
Mederos, M., César, R., Couto, O. D. D., Puydinger Dos Santos, M. V., Minamisawa, R., & Diniz, J. A. (2026). Influence of post-metallization annealing time on the electrical response of AINx-based MOS capacitor on 4H-SiC substrate. 2026 40th Symposium on Microelectronics Technology and Devices (SBMicro), 1–4. https://doi.org/10.1109/sbmicro70495.2026.11684408