A short note on frequency-domain damage calculation for power semiconductors reliability control design
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Publication date
10.02.2025
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05 - Research report or working paper
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Fachhochschule Nordwestschweiz FHNW
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Windisch
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Abstract
In this short note, we give a simple derivation of the damage calculation for power semiconductors based on the frequency-domain approximation of damage. This analysis can be further used to design linear control systems aimed at reducing the damage to the semiconductor switches in power converters.
Keywords
semiconductors lifetime, frequency-domain fatigue analysis, reliability
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English
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Yes
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Zero Emission
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Unpublished
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No peer review
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Citation
Rezaeizadeh, A., & Mastellone, S. (2025). A short note on frequency-domain damage calculation for power semiconductors reliability control design. Fachhochschule Nordwestschweiz FHNW. https://doi.org/10.26041/fhnw-11938