REFO-SVM. Optimized PWM for thermal stress and gate switching instability mitigation in SiC MOSFETs
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27.05.2025
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05 - Research report or working paper
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Hochschule für Technik und Umwelt FHNW
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Windisch
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Abstract
This paper proposes an optimized modulation mechanism for a two-level three-phase power electronics converter. The optimal switch selection is designed to address the two degradation factors in SiC MOSFETs: bond-wire lift-off and gate switching instability (GSI). The switching principle is based on space vector modulation (SVM) principle, however, in any voltage angle, one of the legs will be entirely either on or off to reduce the number of switching. Furthermore, the duty cycles are computed based on reducing the thermal stress of the switching devices. The simulation results are compared to three other SVM-based modulation techniques.
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SiC MOSFET, reliability, gate switching instability, space vector modulation
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English
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Zero Emission
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Rezaeizadeh, A., & Mastellone, S. (2025). REFO-SVM. Optimized PWM for thermal stress and gate switching instability mitigation in SiC MOSFETs. Hochschule für Technik und Umwelt FHNW. https://doi.org/10.26041/fhnw-12823